Characterization of Cu buffer layers for growth of L1_0-FeNi thin films

摘要

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L1_0-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu_3). An FeNi thin film was epitaxially grown on the AuCu_3 buffer layer by alternate monatomic layer deposition and the formation of an L1_0-FeNi ordered alloy was expected. The AuCu_3 buffer layer is thus a promising candidate material for the growth of L1_0-FeNi thin films.