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机译:温度和注入水平的依赖性以及热氧化对p型和n型4H-SiC外延层中载流子寿命的影响
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo,Kyoto 615-8510, Japan,Power Engineering R&D Center, Kansai Electric Power Co., Inc. 3-11-20 Nakoji, Amagasaki 661-0974,Japan;
Power Engineering R&D Center, Kansai Electric Power Co., Inc. 3-11-20 Nakoji, Amagasaki 661-0974,Japan;
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo,Kyoto 615-8510, Japan;
Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo,Kyoto 615-8510, Japan;
机译:降低深能级和表面钝化对p型4H-SiC外延层中载流子寿命的影响
机译:表面和衬底中复合对n型4H-SiC外延层载流子寿命的影响
机译:通过热氧化降低n型4H-SiC中的深能级并提高其载流子寿命
机译:p型和n型4H-SiC外延层中载流子寿命的温度和注入水平依赖性
机译:基于4h-sic n型外延层和cdznte的紧凑型高分辨率辐射探测器的制造与表征。
机译:氧化石墨烯的不同氧化度对P型和N型硅异质结光电探测器的影响
机译:温度和注入水平的依赖性以及热氧化对p型和n型4H-SiC外延层中载流子寿命的影响