机译:氧键对富硅氮化硅薄膜原子结构和光致发光性能的影响
Department of Physics, University of Oslo, P.O. Box 1048, Blindern, NO-0316 Oslo, Norway;
SuperSTEM Laboratory, STFC Daresbury Campus, WA4 4AD Warrington, Cheshire, United Kingdom;
SuperSTEM Laboratory, STFC Daresbury Campus, WA4 4AD Warrington, Cheshire, United Kingdom;
Department of Physics, University of Oslo, P.O. Box 1048, Blindern, NO-0316 Oslo, Norway;
Department of Physics, University of Oslo, P.O. Box 1048, Blindern, NO-0316 Oslo, Norway;
Department of Physics, University of Oslo, P.O. Box 1048, Blindern, NO-0316 Oslo, Norway;
Department of Physics, University of Oslo, P.O. Box 1048, Blindern, NO-0316 Oslo, Norway;
机译:富硅氮化硅薄膜的化学计量对其光致发光和结构性质的影响
机译:包含富硅氮化物和超薄氮化硅阻挡层的受控多层结构中硅纳米晶体的形成和光致发光
机译:局部Si-C键合密度对热退火后Si-QDS光致发光的影响氢化无定形Si富含碳化硅薄膜
机译:SiH_4流速对热线化学气相沉积制备的富含Si的氮氮化硅膜的结构与性能的影响
机译:镧镍氧化物电极上MOCVD衍生的钙钛矿铅锆(x)钛(1-x)氧(3)和铅(scan钽)(1-x)钛(x)氧(3)薄膜的微观结构和电性能缓冲硅
机译:Nd含量对富硅二氧化硅薄膜结构和光致发光性能的影响
机译:等离子体增强化学气相沉积沉积氮化硅和氮氧化硅薄膜的材料结构和机械性能