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机译:GaS上InSb_(1-x)N_X的分子束外延生长及其在长波长红外应用中的表征
Electrical and Computer Engineering, North Carolina A&T State University, Greensboro,North Carolina 27411, USA;
Electrical and Computer Engineering, North Carolina A&T State University, Greensboro,North Carolina 27411, USA;
Electrical and Computer Engineering, North Carolina A&T State University, Greensboro,North Carolina 27411, USA;
Directed Energy Directorate, Air Force Research Laboratory, Kirtland AFB, Albuquerque, New Mexico 87117, USA;
Electrical and Computer Engineering, North Carolina A&T State University, Greensboro,North Carolina 27411, USA;
机译:GaS上InSb1-xNx分子束外延生长及其在长波长红外应用中的表征
机译:用于近红外应用的Gaassb / Gaassbn / GaAIAS核心纳米线的分子束外延生长
机译:InP上InGaAsSb量子阱结构的分子束外延生长和表征,用于在2μm波长范围内工作的激光器
机译:通过全固源分子束外延生长GaAs_(1-X)N_X的生长过程和脱位生成
机译:用于红外光电探测器应用的分子束外延生长的Gaassb(n)纳米线的研究
机译:峰值波长控制的InGaAs / AlGaAs量子阱的分子束外延生长用于4.3μm中波长红外检测
机译:峰值波长控制的InGaAs / AlGaAs量子阱的分子束外延生长,用于4.3μm中波长红外检测
机译:用于红外探测器应用的亚稳化合物半导体的分子束外延生长和表征