Molecular Beam Epitaxial Growth and Characterization of Metastable CompoundSemiconductors for Infrared Detector Applications

摘要

Single crystal metastable GeSn alloys were grown on lattice-matched GaSb and InPsubstrates. Surface structures of AlGaSb and alternating GaSb and AlSb layers have been studied. Resonant tunneling and interband tunneling in the polytype GaSb/AlSb.InAs material system was observed. On the basis of simple circuit modeling, we show these structures have potential for high-frequency performance. An InAs-channel field-effect transistor was fabricated and theoretical shown to have an order of magnitude higher transconductance than AlGaAs/GaAs HEMT. We reported the successful operation of the first AlSbAs/GaSb p-channel MODFET with the highest transconductance at 77K achieved for any p-channel FET. We have studied the doping of Ge and Sn for GaSb by MBE and found them well-behaved up to very high doping levels.