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Hysteretic ac loss of a superconductor strip subject to an oscillating transverse magnetic field: Geometrical and electromagnetic effects

机译:横振荡磁场作用下超导体带的磁滞交流损耗:几何和电磁效应

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摘要

Numerical simulations of geometrical and electromagnetic effects on the distributions of the magnetic induction, the electric field, the current density, the power loss density, and the hysteretic ac loss of a type-Ⅱ superconductor strip exposed to an oscillating transverse magnetic field are performed by resorting to the quasistatic approximation of a vector potential approach. The underlying definition of the superconducting constituent makes use of a generalized "smoothed" Bean model of the critical state, which includes the field dependence of the induced current as well. Based on the Jacobian-free Newton-Krylov approach and the backward Euler scheme, the numerical analysis at hand is tailored to the problem of a variable width/thickness aspect ratio of the superconductor strip. Assigning representative materials characteristics and conditions of the applied magnetic field, the main findings include: (ⅰ) at high amplitudes of the applied magnetic field, variations of the magnetic induction, the induced electric field, the induced current density, and the power loss density across the thickness of the strip die away as the latter quantity abates; (ⅱ) at low and moderate amplitudes of the applied magnetic field, the hysteretic ac loss abates rapidly, as the aspect ratio of the strip augments, the field dependence of the induced current merely playing an insignificant part thereby; conversely, whereas the geometrical effect controlled by the aspect ratio of the strip is minute at high amplitudes of the applied magnetic field, a reduction of the hysteretic ac loss occurs due to Kim's extended Ansatz for the critical state.
机译:几何和电磁效应对暴露于横向横向磁场的Ⅱ型超导体条的磁感应,电场,电流密度,功率损耗密度和磁滞ac损耗分布的数值模拟是通过以下方法进行的:诉诸矢量势方法的准静态逼近。超导成分的基本定义利用了临界状态的广义“平滑” Bean模型,该模型还包括感应电流的场相关性。基于无雅可比的Newton-Krylov方法和反向Euler方案,手头的数值分析针对超导体带材的宽度/厚度纵横比可变的问题进行了调整。通过分配代表性的材料特性和施加磁场的条件,主要发现包括:(ⅰ)在施加磁场的高振幅下,磁感应强度,感应电场,感应电流密度和功率损耗密度的变化随着后面的数量减少,带材的整个厚度消失。 (ⅱ)在外加磁场的低幅和中等幅值时,随着带的长宽比的增加,磁滞交流损耗迅速减小,从而感应电流的场依存性仅起不重要的作用;相反,尽管在高磁场强度下,带材的长宽比控制的几何效应很小,但由于Kim在临界状态下扩展了Ansatz,因此磁滞损耗减小了。

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  • 来源
    《Journal of Applied Physics》 |2013年第19期|193902.1-193902.8|共8页
  • 作者

    H. Rauh; G.T. Ma;

  • 作者单位

    Institut fuer Materialwissenschaft, Technische Universitaet Darmstadt, 64287 Darmstadt, Germany;

    Institut fuer Materialwissenschaft, Technische Universitaet Darmstadt, 64287 Darmstadt, Germany Applied Superconductivity Laboratory, State Key Laboratory of Traction Power, Southwest Jiaotong University, 610031 Chengdu, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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