Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

摘要

Static and low frequency noise (LFN) characterizations in two-dimensional (2D) N-type random network thin film transistors (RN-TFTs) based on single-walled carbon nanotubes were presented. For the electrical parameter extraction, the Y-function method was used to suppress the series resistance (Rsd) influence. The gate-to-channel capacitance (C_(gc)) was directly measured by the split capacitance-to-voltage method and compared to 2D metal-plate capacitance model (C_(2D))- In addition, to account for the percolation-dominated 2D RN-TFTs, a numerical percolation simulation was performed. LFN measurements were also carried out and the results were well interpreted by the carrier number and correlated mobility fluctuation model. Finally, one-dimensional (ID) cylindrical analytical capacitance based model (C_(ID）) was suggested and applied to provide better consistency between all electrical parameters based on experimental and simulation results.