首页>
外国专利>
Static random access memories having carbon nanotube thin films
Static random access memories having carbon nanotube thin films
展开▼
机译:具有碳纳米管薄膜的静态随机存取存储器
展开▼
页面导航
摘要
著录项
相似文献
摘要
A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.
展开▼