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Large-scale molecular dynamics simulations of glancing angle deposition

机译:掠射角沉积的大规模分子动力学模拟

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Using a computationally efficient method, we have carried out large-scale molecular dynamics simulations of Cu/Cu(100) growth up to 20 monolayers (ML) for deposition angles ranging from 50° to 85° and for both random and fixed azimuthal angles. A variety of quantities including the porosity, roughness, lateral correlation length, average grain size, strain, and defect concentration are used to characterize the thin-film morphology. For large deposition angles (9 > 80°), we find well-defined columnar growth while for smaller angles, columnar growth has not yet set in. In addition, for θ = 70° - 85°, the thin-film porosity and columnar tilt angles (for fixed azimuthal angle φ) are in reasonable agreement with experiments. For both random and fixed φ, the number of grains, average grain-size, and number of surface atoms belonging to (111) facets increase rapidly with deposition angle. As a result, twin facet formation and budding occur in our simulations, in good agreement with experiments. In good qualitative agreement with recent experimental observations, we also find that the average strain is initially compressive but becomes tensile after the onset of columnar growth. Our simulations also reveal that for large deposition angles a variety of unexpected and complex dynamical processes play a key role in determining the evolution of the surface morphology and microstructure. In particular, due to the existence of deposition-induced events, the vacancy density remains very small, even though the defect density is relatively large and increases with deposition angle. In addition, large-scale re-arrangement events as well as thermal (elastic) vibrations lead to large-amplitude oscillations in the columnar growth regime. These oscillations play a key role in promoting rapid coalescence via additional large-scale collective motion, thus, significantly enhancing the coarsening process.
机译:使用有效的计算方法,我们对Cu / Cu(100)最多生长20个单层(ML)的沉积角(范围为50°至85°)以及随机和固定方位角进行了大规模的分子动力学模拟。包括孔隙率,粗糙度,横向相关长度,平均晶粒尺寸,应变和缺陷浓度在内的各种量用于表征薄膜形态。对于较大的沉积角(9> 80°),我们发现了明确的柱状生长,而对于较小的角度,尚未发现柱状生长。此外,对于θ= 70°-85°,薄膜的孔隙率和柱状倾斜角(对于固定方位角φ)与实验合理吻合。对于随机和固定φ而言,属于(111)小面的晶粒数量,平均晶粒尺寸和表面原子数量都随沉积角度而迅速增加。结果,在我们的模拟中发生了双晶面的形成和萌芽,与实验非常吻合。与最近的实验观察在质量上吻合良好,我们还发现平均应变在开始时是压缩的,但在柱状生长开始后变成拉伸的。我们的模拟还表明,对于较大的沉积角,各种意外的和复杂的动力学过程在确定表面形态和微观结构的演变中起着关键作用。尤其是,由于存在缺陷引起的事件,因此空位密度仍然很小,即使缺陷密度相对较大并且随沉积角度而增加。另外,大规模的重排事件以及热(弹性)振动会导致柱状生长机制中的大振幅振荡。这些振荡在通过其他大规模集体运动促进快速聚结中起着关键作用,因此,大大增强了粗化过程。

著录项

  • 来源
    《Journal of Applied Physics》 |2013年第8期|083517.1-083517.9|共9页
  • 作者单位

    Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, USA;

    Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, USA;

    Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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