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机译:I型GaAs_(1-x)Sb_x / GaAs多量子阱结构的温度相关表面光电压谱
Institute of Physics, Wroclaw University of Technology, Wyb. Wyspianskiego 27, 50-370 Wroclaw, Poland;
Institute of Physics, Wroclaw University of Technology, Wyb. Wyspianskiego 27, 50-370 Wroclaw, Poland;
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Department of Electronic Engineering, Ming Chi University of Technology, Taishan, Taipei 243, Taiwan;
Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan;
机译:I型GaAs
机译:I型GaAs_(1-x)Sb_x / GaAs多量子阱结构的光学研究
机译:具有通过金属有机化学气相沉积法生长的GaAs,GaAsP和InGaP势垒的拟态GaAs_(1-x)Sb_x量子阱结构的能带阵容
机译:通过分子束外延在InP上生长的In_(0.53)Ga_(0.47)As / GaAs_(1-x)Sb_x II型应变MQW结构
机译:II-VI DMS异质结构的磁光研究:锌(1-xy)锰(x)镉(y)硒/锌(1-x)锰(x)硒单量子阱,锌(1-x)镉( x)硒/锌(1-y)锰(y)硒I型和硒化镉/碲化锌的II型超晶格。
机译:变质InAs / InGaAs / GaAs量子点异质结构光电压中的双极效应:光敏器件的表征和设计解决方案
机译:铍掺杂Gaas / alas多量子阱的光反射率和表面光电压谱
机译:来自In x Ga sub 1-x as / Gaas多量子阱的阴极发光的温度依赖性