In_(0.53)Ga_(0.47)As/GaAs_(1-x)Sb_x type II strained MQW structures grown on InP by molecular beam epitaxy

机译：通过分子束外延在InP上生长的In_（0.53）Ga_（0.47）As / GaAs_（1-x）Sb_x II型应变MQW结构

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An In_(0.53)Ga_(0.47)As/Ga/As_(0.5)Sb_(0.5) type II quantum well structure on InP substrates is very attactive material system for infrared light emitting diodes and lassers in the 2 #mu# m wavelength region [1, 2]. Introduction of the strained structure gives superior performance as well as longer wavelength operation. This paper reports the molecular beam epitaxial (MBE) growth and characterization of In_(0.53)Ga_(0.47)As/GaAs_(1-x)Sb_x type II strained multiple quantum well (MQW) structures.

机译：InP衬底上的In_（0.53）Ga_（0.47）As / Ga / As_（0.5）Sb_（0.5）II型量子阱结构是用于2＃mu＃m波长区域中的红外发光二极管和激光的非常吸引人的材料系统[1，2]。引入应变结构可提供出色的性能以及更长的波长操作。本文报道了分子束外延（MBE）的生长和In_（0.53）Ga_（0.47）As / GaAs_（1-x）Sb_x II型应变多量子阱（MQW）结构的表征。

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《The Third SANKEN international symposium on advanced nanoelectronics : Devices, materials, and computing》|2000年|p.291|共1页
会议地点 Osaka(JP)
作者
H.harada; Y.kawamura; T.Katayama; H.Takasaki; A.Yamamoto; H.Naito; N.Inoue;
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专利

1. Electroluminescence of In_(0.53)Ga_(0.47)As_(0.99)N_(0.01)/GaAs_(0.5)Sb_(0.5) Type-Ⅱ Quantum Well Light-Emitting Diodes Grown on InP Substrates by Molecular Beam Epitaxy [J] . Yuichi KAWAMURA, Naohisa INDUE Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第6A期

机译：分子束外延在InP衬底上生长的In_（0.53）Ga_（0.47）As_（0.99）N_（0.01）/ GaAs_（0.5）Sb_（0.5）Ⅱ型量子阱发光二极管的电致发光
2. Evidence of interface-induced persistent photoconductivity in InP/In_(0.53)Ga_(0.47)As/InP double heterostructures grown by molecular-beam epitaxy [J] . M. K. Hudait, Y. Lin, S. H. Goss, Applied Physics Letters . 2005,第3期

机译：分子束外延生长的InP / In_（0.53）Ga_（0.47）As / InP双异质结构中界面诱导的持久光电导的证据
3. Improved uniformity of self-organized In_(0.53)Ga_(0.47)As/ In_(0.52)Al_(0.48)As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy [J] . Yasuhide Ohno, Satoshi Shimomura, Satoshi Hiyamizu Journal of Crystal Growth . 2003,第1a4期

机译：通过分子束外延生长在（775）B取向InP衬底上生长的自组织In_（0.53）Ga_（0.47）As / In_（0.52）Al_（0.48）As量子线的均匀性得到改善
4. In_(0.53)Ga_(0.47)As/GaAs_(1-x)Sb_x type II strained MQW structures grown on InP by molecular beam epitaxy [C] . H.harada, Y.kawamura, T.Katayama, SANKEN international symposium on advanced nanoelectronics : Devices, materials, and computing . 2000

机译：IN_（0.53）GA_（0.47）AS / GAAS_（1-X）SB_X II型由分子束外延在INP上生长的紧张MQW结构
5. Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs. [D] . Chen, Tai-Chou Papo. 2008

机译：通过分子束外延和簇束外延发展III-氮化物半导体，以及基于氮化铟镓MQW的LED的制造。
6. AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy [O] . Yosuke Tamura, Kazuhiro Hane 2015

机译：通过分子束外延生长在Si（111）衬底上的AlN纳米壁结构
7. Effect of an InP/In_{0.53}Ga_{0.47}As interface on spin-orbit interaction in In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As heterostructures [O] . Lin, Yiping, Koga, Takaaki, Nitta, Junsaku 2005

机译：InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响
8. Much Improved Self-Organized In(0.53)Ga(0.47)As Quantum Wire Lasers Grown on (775)B InP Substrates by Molecular Beam Epitaxy [R] . Ohmori, K. , Hino, H. , Fujita, T. , 2006

机译：通过分子束外延在（775）B Inp衬底上生长的大量改进的自组织In（0.53）Ga（0.47）as量子线激光器

In_(0.53)Ga_(0.47)As/GaAs_(1-x)Sb_x type II strained MQW structures grown on InP by molecular beam epitaxy

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