首页> 外文期刊>Journal of Applied Physics >The nonlinear Rashba effect in Hg_(077)Cd_(023)Te inversion layers probed by weak antilocalization analysis
【24h】

The nonlinear Rashba effect in Hg_(077)Cd_(023)Te inversion layers probed by weak antilocalization analysis

机译:弱反定位分析探测Hg_(077)Cd_(023)Te反型层中的非线性拉什巴效应

获取原文
获取原文并翻译 | 示例
           

摘要

The Rashba spin-orbit interaction of the two-dimensional electron gas with high mobility in the inversion layer of p-type Hg_(0.77)Cd_(0.23)Te is investigated by magnetotransport measurements. Both the Rashba spin splitting and Rashba coefficient are extracted by analysis of the weak anti-localization effect using the Golub model. It is found that both the splitting and coefficient increase with increasing electron density (~3.0-6.0 × 10~(15)m~(-2)), i.e., with the gate voltage. A self-consistent Schrodinger-Poisson calculation is performed and suggests that the nonlinear Rashba effect caused by the weakening of interband coupling, especially at high electron density, dominates this system.
机译:通过磁传输测量研究了p型Hg_(0.77)Cd_(0.23)Te反型层中二维高迁移率电子气的Rashba自旋轨道相互作用。 Rashba自旋分裂和Rashba系数都是通过使用Golub模型分析弱的抗局部化效果而提取的。发现随着电子密度的增加(〜3.0-6.0×10〜(15)m〜(-2)),即栅电压的增加,分裂和系数都增加。进行了自洽的Schrodinger-Poisson计算,结果表明,由带间耦合减弱引起的非线性Rashba效应,尤其是在高电子密度下,占主导地位。

著录项

  • 来源
    《Journal of Applied Physics》 |2013年第1期|013704.1-013704.7|共7页
  • 作者单位

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics,Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics,Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Science, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Science, Shanghai 200083, People's Republic of China,Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200062, People's Republic of China;

    Measurement Science and Standards, National Research Council Canada, Building M-36,1200 Montreal Road, Ottawa, Ontario K1A 0R6, Canada;

    Measurement Science and Standards, National Research Council Canada, Building M-36,1200 Montreal Road, Ottawa, Ontario K1A 0R6, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号