...
机译:通过金属有机化学气相沉积在m平面(1100)AlN衬底上沉积的同质外延AlN薄膜
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA;
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA;
机译:通过金属有机化学气相沉积法在m平面(
机译:通过金属有机化学气相沉积在(0001)取向的AlN衬底上进行AlN的表面制备和同质外延沉积
机译:金属有机化学气相沉积在(0001)取向AIN衬底上制备AlN的表面制备和同质外延沉积
机译:通过金属有机化学气相沉积(MOCVD)在独立的大块m平面衬底上开发同质外延生长的GaN薄膜层
机译:金属有机化学气相沉积法在2D衬底上碲化镉薄膜的Van der Waals外延
机译:通过原子层沉积和化学气相沉积在高纵横比结构中沉积的薄膜的ToF-SIMS 3D分析
机译:通过金属有机化学气相沉积在蓝宝石衬底上生长的alN / GaN金属 - 绝缘体 - 半导体结构的电容 - 电压表征