机译:薄膜三维拓扑绝缘体金属氧化物半导体场效应晶体管:10纳米以下器件的候选器件
Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009, Australia;
Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009, Australia;
Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009, Australia;
Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009, Australia;
Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009, Australia;
机译:薄膜三维拓扑绝缘体金属氧化物半导体场效应晶体管:10纳米以下器件的候选器件
机译:应力技术对<100>低于90nm的绝缘体上硅互补金属氧化物半导体场效应晶体管的器件性能和可靠性的影响
机译:拓扑绝缘体Bi_2Se_3薄膜作为金属氧化物半导体场效应晶体管的替代沟道材料
机译:由生物合成的TiO_2介电薄膜组成的金属氧化物半导体(MOS)器件
机译:探测拓扑绝缘体薄膜和拓扑绝缘体/铁磁体(TI / FM)异质结构表面状态的磁传输方法。
机译:拓扑绝缘体薄膜三维超晶格中增强的热电性能
机译:拓扑绝缘体Bi2Se3薄膜作为金属氧化物半导体场效应晶体管中的替代沟道材料