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机译:深能级陷阱对半绝缘CdZnTe电学性质的影响
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, China;
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, China;
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, China;
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, China;
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, China;
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an, China;
机译:从半绝缘CdZnTe探测器材料的热激发电流谱中识别深阱能级
机译:半绝缘CDZNTE中深层划痕的分析
机译:晶体生长方法对CdZnTe:In晶体深层缺陷和电学性能的影响
机译:光谱中CdZnTe的独特深能级:补偿,俘获和极化
机译:用于高频应用的氮化铝镓/氮化镓HEMT中的陷获效应:使用大信号网络分析仪和深层光谱学进行建模和表征。
机译:中华大蟾蜍杆状光感受器的电学和适应性。 I.改变细胞外Ca(2+)水平的影响
机译:从半绝缘CdZnTe探测器材料的热激发电流谱中识别深阱能级
机译:深层陷阱在光控半绝缘Gaas开关中的作用。