ANNEALING OF SEMI-INSULATING CDZNTE CRYSTALS

摘要

In a method of annealing a Cd1-x Z n x T e sam-ple/wafer,surface contamination is removed from the sam-ple/waferand the sample/wafer is then introduced into achamber. The chamber is evacuated and Hydrogen or Deu-teriumgas is introduced into the evacuated chamber. Thesample/wafer is heated to a suitable annealing temperaturein the presence of the Hydrogen or Deuterium gas for apredetermined period of time.