Annealing of semi-insulating CdZnTe crystals

摘要

In a method of annealing a Cd_1-xZn_xTe sample/wafer, surface contamination is removed from the sample/wafer and the sample/wafer is then introduced into a chamber. The chamber is evacuated and Hydrogen or Deuterium gas is introduced into the evacuated chamber. The sample/wafer is heated to a suitable annealing temperature in the presence of the Hydrogen or Deuterium gas for a predetermined period of time.