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A multi-scale analysis of the crystallization of amorphous germanium telluride using ab initio simulations and classical crystallization theory

机译:使用从头算和经典结晶理论对非晶态碲化锗结晶进行多尺度分析

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摘要

The crystallization properties of the prototypical binary phase change material (PCM) germanium telluride (GeTe) are investigated by combining crystallization theory with ab initio molecular dynamics simulations. The temperature dependence of the physical quantities that determine the crystallization properties is calculated and analyzed. It is shown that the critical nucleus radius of a crystalline cluster is smaller than 1.4 nm when the annealing temperature is lower than 600 K, indicating an extremely promising scaling scenario. Our analysis reveals that the elastic energy, which is largely ignored in existing PCM crystallization studies, plays an important role in determining various crystallization properties and the ultimate scaling limit of the PCM. By omitting the influence of elastic energy, the critical formation energy (critical nuclei radius) will be underestimated by 41.7% (22.4%), and the nucleation rate will be overestimated by 74.2% when the annealing temperature is 600 K.
机译:通过将结晶理论与从头算分子动力学模拟相结合,研究了典型的二元相变材料(PCM)碲化锗(GeTe)的结晶特性。确定和分析确定结晶性质的物理量的温度依赖性。结果表明,当退火温度低于600 K时,晶簇的临界晶核半径小于1.4 nm,这表明结垢的可能性非常大。我们的分析表明,在现有的PCM结晶研究中,弹性能(在很大程度上被忽略)在确定各种结晶性质和PCM的最终结垢极限方面起着重要作用。忽略弹性能的影响,当退火温度为600 K时,临界形成能(临界核半径)将低估41.7%(22.4%),成核率将高估74.2%。

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  • 来源
    《Journal of Applied Physics》 |2014年第2期|023513.1-023513.7|共7页
  • 作者单位

    Department of Electrical Engineering, University of Washington, Seattle, Washington 98195, USA;

    Department of Electrical Engineering, University of Washington, Seattle, Washington 98195, USA;

    Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195, USA;

    Department of Electrical Engineering, University of Washington, Seattle, Washington 98195, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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