机译:使用原位X射线衍射直接观察InAs量子点和盖层在分子束外延生长过程中的应变
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
Faculty of Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan;
Quantum Beam Science Center, Japan Atomic Energy Agency, Koto 1-1-1, Sayo-cho, Hyogo 679-5148, Japan;
Quantum Beam Science Center, Japan Atomic Energy Agency, Koto 1-1-1, Sayo-cho, Hyogo 679-5148, Japan;
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan;
机译:GaAs(001)表面二维应变InAs外延层的原子结构:量子点生长的原位观察
机译:分子束外延生长和高度均匀的InAs / GaAs量子点层的特性
机译:GaAs(001)分子束外延生长过程中InAs量子点的原位扫描隧道显微镜
机译:GaAs(001)分子束外延生长过程中InAs量子点的原位扫描隧道显微镜观察
机译:用于太阳能电池的高质量InAs / GaAsSb量子点的外延生长。
机译:从掠入射X射线衍射测量中提取的InAs量子点的密度依赖性成分
机译:INAS / GaAs(001)量子点生长的原位X射线衍射研究