机译:在高压氢等离子体中通过化学溅射工艺选择性沉积结晶硅膜
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan,Research Center for Ultra-Precision Science and Technology, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan,Research Center for Ultra-Precision Science and Technology, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan;
机译:大气压等离子体液体沉积和大气压等离子体增强化学气相沉积沉积的聚乙二醇薄膜:工艺,化学组成分析和生物相容性
机译:基本选择性大气压等离子体增强的化学气相沉积方法,用于微米沉积等离子体聚合甲基丙烯酸甲基丙烯酸甲酯
机译:沉积压力对直流脉冲等离子体化学气相沉积制备的氢化非晶碳膜的影响
机译:通过等离子体增强的化学气相沉积沉积的氢化氧化铝膜,用于P型晶体硅的钝化
机译:在中等压力下在微波等离子体辅助化学气相沉积反应器中对氢基等离子体进行建模。
机译:原子氮/氢的作用在GaN薄膜生长中通过用双重等离子体来源化学辅助溅射
机译:等离子体增强化学气相沉积(PE-CVD)氢化纳米晶体硅(NC-Si:H)膜的生长(PE-CVD)
机译:氩气和氢气低压射频等离子体中氯硅烷等离子体变量与si薄膜沉积过程的相关性