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首页> 外文期刊>Journal of Applied Physics >Raman spectra of Cu_2B~ⅡC~ⅣX_4~Ⅵ magnetic quaternary semiconductor compounds with tetragonal stannite type structure
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Raman spectra of Cu_2B~ⅡC~ⅣX_4~Ⅵ magnetic quaternary semiconductor compounds with tetragonal stannite type structure

机译:四方锡矿结构的Cu_2B〜ⅡC〜ⅣX_4〜Ⅵ磁性季铵化合物的拉曼光谱

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摘要

A comparative study of the Raman spectra of Cu_2B~ⅡC~ⅣS_4~Ⅵ and Cu_2B~ⅡC~ⅣSe_4~Ⅵ(where B = Mn or Fe) magnetic quaternary semiconductor compounds with stannite-type structure (I42m) has been done. Most of the fourteen Raman lines expected for these materials were observed in the spectra. The two strongest lines observed have been assigned to the IR inactive A)1 and A]2 stannite modes that originated from the motion of the S or Se anion around the Cu and CIV cations remaining at rest. The shift in the frequency of these two lines of about 150 cm"1 to lower energies observed in Cu_2B~ⅡC~ⅣSe_4~Ⅵ compounds as compared to those in Cu_2B~ⅡC~ⅣS_4~Ⅵ ones, can then be explained as due to the anion mass effect. Based on the fact that values of these frequencies depend mainly on anion mass and bond-stretching forces between nearest-neighbor atoms, the vibrational frequencies ν(A_1~2) and ν(A_1~2) of both modes for several Cu_2B~ⅡC~ⅣX_4~Ⅵ stannite compounds (where X = S, Se, or Te) very close to the experimental data reported for these materials were calculated from a simple model that relates these stretching forces to the anion-cation bond-distances.
机译:对具有亚锡型结构(I42m)的磁性季铵化合物Cu_2B〜ⅡC〜ⅣS_4〜Ⅵ和Cu_2B〜ⅡC〜ⅣSe_4〜Ⅵ(其中B = Mn或Fe)的拉曼光谱进行了比较研究。在光谱中观察到了预期用于这些材料的十四条拉曼线中的大多数。观察到的两条最强的线已分配给IR惰性A)1和A] 2锡矿模式,这是由于S或Se阴离子围绕静止的Cu和CIV阳离子运动而产生的。与Cu_2B〜ⅡC〜ⅣS_4〜Ⅵ化合物相比,Cu_2B〜ⅡC〜ⅣSe_4〜Ⅵ化合物中观察到的这两条线的频率向较低能量的偏移约为150 cm“ 1。阴离子质量效应:基于这些频率的值主要取决于阴离子质量和最近邻原子之间的键拉伸力这一事实,两种模式的振动频率ν(A_1〜2)和ν(A_1〜2) Cu_2B〜ⅡC〜ⅣX_4〜Ⅵ锡矿化合物(其中X = S,Se或Te)与这些材料的实验数据非常接近,是通过将这些拉伸力与阴离子-阳离子键距相关的简单模型计算得出的。

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  • 来源
    《Journal of Applied Physics 》 |2015年第20期| 205701.1-205701.6| 共6页
  • 作者单位

    Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, Venezuela;

    Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, Venezuela;

    Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, Venezuela;

    Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, Venezuela;

    Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, Venezuela;

    Grupo de Investigation en Quimica Estructural, Facultad de Ciencias, Escuela de Quimica, Universidad Industrial de Santander, Apartado Aereo 678, Bucaramanga, Colombia;

    Grupo de Investigation en Quimica Estructural, Facultad de Ciencias, Escuela de Quimica, Universidad Industrial de Santander, Apartado Aereo 678, Bucaramanga, Colombia;

    Centro de Estudios de Semiconductores, Departamento de Fisica, Facultad de Ciencias, Universidad de Los Andes, Merida, Venezuela;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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