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Transverse piezoelectric coefficient measurement of flexible lead zirconate titanate thin films

机译:柔性锆钛酸铅薄膜的横向压电系数测量

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摘要

Highly flexible lead zirconate titanate, Pb(Zr,Ti)O_3 (PZT), thin films have been realized by modified sol-gel process. The transverse piezoelectric coefficient d_(31) was determined from the tip displacement of bending-mode actuators made of PZT cantilever deposited onto bare or RuO_2 coated aluminium substrate (16 μm thick). The influence of the thickness of ruthenium dioxide RuO_2 and PZT layers was investigated for Pb(Zr_(0.57)Ti_(0.43))O_3. The modification of Zr/Ti ratio from 40/60 to 60/40 was done for 3 μm thick PZT thin films onto aluminium (Al) and Al/RuO_2 substrates. A laser vibrometer was used to measure the beam displacement under controlled electric field. The experimental results were fitted in order to find the piezoelectric coefficient. Very large tip deflections of about 1 mm under low voltage (~8 V) were measured for every cantilevers at the resonance frequency (~180 Hz). For a given Zr/Ti ratio of 58/42, it was found that the addition of a 40 nm thick RuO_2 interfacial layer between the aluminium substrate and the PZT layer induces a remarkable increase of the d_(31) coefficient by a factor of 2.7, thus corresponding to a maximal d_(31) value of 33 pC/N. These results make the recently developed PZT/Al thin films very attractive for both low frequency bending mode actuating applications and vibrating energy harvesting.
机译:通过改进的溶胶-凝胶工艺已经实现了高柔性锆钛酸铅钛酸盐Pb(Zr,Ti)O_3(PZT)薄膜。横向压电系数d_(31)由沉积在裸露或RuO_2涂层的铝基板(厚度为16μm)上的PZT悬臂制成的弯曲模式致动器的尖端位移确定。研究了Pb(Zr_(0.57)Ti_(0.43))O_3对二氧化钌RuO_2和PZT层厚度的影响。 Zr / Ti比值从40/60更改为60/40,是针对3μm厚的PZT薄膜在铝(Al)和Al / RuO_2衬底上进行的。使用激光振动计在受控电场下测量光束位移。拟合实验结果以求出压电系数。在谐振频率(〜180 Hz)下,对于每个悬臂,在低压(〜8 V)下测得非常大的尖端变形,约为1 mm。对于给定的Zr / Ti比为58/42,发现在铝基板和PZT层之间添加40 nm厚的RuO_2界面层会导致d_(31)系数显着增加2.7倍。 ,因此对应的最大d_(31)值为33 pC / N。这些结果使得最近开发的PZT / Al薄膜对于低频弯曲模式驱动应用和振动能量收集都非常有吸引力。

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  • 来源
    《Journal of Applied Physics》 |2015年第20期|204101.1-204101.8|共8页
  • 作者单位

    LUNAM Universite, Universite de Nantes, IETR (Institut d' Electronique et de Telecommunications de Rennes), UMR CNRS 6164, 2 rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3, France;

    LUNAM Universite, Universite de Nantes, IETR (Institut d' Electronique et de Telecommunications de Rennes), UMR CNRS 6164, 2 rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3, France;

    LUNAM Universite, Universite de Nantes-Ecole Centrale Nantes, GeM (Institut de Recherche en Genie Civil et Ingenierie Mecanique), UMR CNRS 6183, 2 rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3, France;

    LUNAM Universite, Universite de Nantes, IETR (Institut d' Electronique et de Telecommunications de Rennes), UMR CNRS 6164, 2 rue de la Houssiniere, BP 92208, 44322 Nantes Cedex 3, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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