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机译:在溢出状态下对基于GaN的金属-绝缘体-半导体高电子迁移率晶体管栅堆叠的小信号响应进行建模:势垒电阻和界面态的影响
Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;
Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria,Infineon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach, Austria;
Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;
Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;
Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;
Infineon Technologies Austria AG, Siemensstrasse 2, A-9500 Villach, Austria;
Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;
Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria;
机译:通过考虑自加热效应,GaN基金属 - 绝缘体 - 半导体高电子迁移率晶体管DC特性分析
机译:低压化学气相沉积SiN
机译:具有正常关断能力的AlGaN / GaN高电子迁移率晶体管中,AlGaN势垒和由原位生长的SiN和Al2O3组成的栅堆叠之间的固定界面电荷
机译:溢出状态下基于GaN的MIS-HEMT栅极叠层的改进的集总元素模型
机译:辐照损伤对GaN基金属氧化物半导体高电子迁移率晶体管和β-GA2O3的影响
机译:具有垂直栅极结构的新型GaN金属-绝缘体-半导体高电子迁移率晶体管
机译:通过考虑自加热效应,GaN基金属 - 绝缘体 - 半导体高电子迁移率晶体管DC特性分析
机译:用于alGaas / Gaas高电子迁移率晶体管的DC和小信号物理模型