Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

摘要

Using a generalized extraction method, the fixed charge density Nint at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage Vth of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted Nint is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in Vth = +1 V. Fabrication of a gate stack with Al2O3 as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al2O3 interface.