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Investigation of SiN x and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

机译：Algan / GaN高电子移动晶体管的SIN X和ALN钝化的研究：界面陷阱和极化电荷的作用

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Song Yang; Zhikai Tang; Mengyuan Hua; Zhaofu Zhang; Jin Wei; Yunyou Lu; Kevin J. Chen;
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1. Investigation of SiNx and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges [J] . Song Yang, Zhikai Tang, Mengyuan Hua, Electron Devices Society, IEE . 2020,第期

机译：对AlGaN / GaN高电子迁移率晶体管的SINX和ALN钝化的研究：界面陷阱和极化电荷的作用
2. Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges [J] . Huang S., Jiang Q., Yang S., Electron Device Letters, IEEE . 2013,第2期

机译：用于AlGaN / GaN HEMT的PEALD生长AlN钝化机理：通过极化电荷补偿界面陷阱
3. Impact of SiN passivation film stress on electroluminescence characteristics of AlGaN/GaN high-electron-mobility transistors [J] . Ma Qiang, Urano Shiyo, Ando Yuji, Applied physics express . 2021,第9期

机译：SIN钝化膜应力对ALGAN / GAN高电子迁移率晶体管电致发光特性的影响
4. Role of shallow surface traps and polarization charges in nitride-based passivation for AlGaN/GaN heterojunction FET [C] . Song Yang, Zhikai Tang, Yunyou Lu, 2016 International Forum on Wide Bandgap Semiconductors China . 2016

机译：浅表面陷阱和极化电荷在AlGaN / GaN异质结FET的基于氮化物的钝化中的作用
5. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. [D] . Ha, Minh-Trang Teresa. 2016

机译：在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
6. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors [O] . Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, 2016

机译：AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
7. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors [O] . Wu Tian-Li, Marcon Denis, Bakeroot Benoit, 2015

机译：alGaN / GaN金属 - 绝缘体 - 半导体高电子迁移率晶体管的界面态/边界陷阱与阈值电压漂移的相关性

Investigation of SiN x and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

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