Band offset in (Ga, In)As/Ga(As, Sb) heterostructures

摘要

A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k•p method. This theory-experiment comparison reveals an unusual, temperature dependent variation of the band alignment between the (Ga, In)As and Ga(As, Sb) quantum wells.