Fast switching and low power of superlattice-like SnSe_2/Sb thin films for phase change memory application

摘要

Two non-promising phase change materials (SnSe_2 and Sb) were prepared through the superlattice-like (SLL) method to explore the suitable phase change layer for phase change memory (PCM) application. The crystallization temperature, activation energy, and 10-year data retention of the SLL [SnSe_2(10nm)/Sb(2nm)]_4 ([SS(10)/S(2)]_4) thin film are 185℃, 3.03 eV, and 116℃, respectively. The volume change of the SLL [SS(10)/S(2)]_4 thin film during the crystallization is as small as 3.5%. The phase transition speed of the SLL [SS(10)/S(2)]_4 thin film for crystallization is only about 11.9 ns. PCM cell based on the SLL [SS(10)/S(2)]_4 thin film shows high operation speed (20 ns for SET/RESET) and lower power consumption (2.75 × 10~(-11) J for RESET operation).