Superlattice-like Zn₁₅Sb₈₅/Ga₃₀Sb₇₀ thin films for low power and ultrafast phase change memory application

摘要

In this study, the amorphous-to-crystalline transitions of superlattice-like (SLL) Zn15Sb85/Ga30Sb70 thin films were investigated by in situ film resistance measurement. The thermal stability, resistance and band gap of the SLL Zn15Sb85/Ga30Sb70 thin film perform well. The data retention temperature for 10 years increases from 177 degrees C of [Zn(15)Sb(85)7/Ga(30)Sb(70)3] to 220 degrees C of [Zn(15)Sb(85)2/Ga(30)Sb(70)8]. The X-ray diffraction patterns show the presence of a large amount of Sb phase in the Zn15Sb85/Ga30Sb70 thin films, which causes a rapid phase transition. The surface morphology is observed by atomic force microscopy, which indicates that the thickness of Ga30Sb70 in the SLL thin films can affect the grain size and inhibit the crystallisation process. For the Zn15Sb85/Ga30Sb70 thin films, an ultra-short switching time of around 2 ns is achieved. These results indicate that the SLL Zn15Sb85/Ga30Sb70 thin films have a promised application in phase change memory.