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It possesses the production manner and phase change memory device null below-mentioned chemical formula 1 of the GST thin film and the aforementioned thin film which were formed the germanium
It possesses the production manner and phase change memory device null below-mentioned chemical formula 1 of the GST thin film and the aforementioned thin film which were formed the germanium
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机译:具有形成锗的GST薄膜及上述薄膜的下述化学式1的制造方式及相变存储装置无效
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摘要
A NOR-type flash memory device comprises a plurality twin-bit memory cells arranged so that pairs of adjacent memory cells share a source/drain region and groups of four adjacent memory cells are electrically connected to each other by a single bitline contact.
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