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首页> 外文期刊>Journal of Applied Physics >Electroluminescence from light-emitting devices with erbium-doped TiO_2 films: Enhancement effect of yttrium codoping
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Electroluminescence from light-emitting devices with erbium-doped TiO_2 films: Enhancement effect of yttrium codoping

机译:掺devices TiO_2薄膜的发光器件的电致发光:钇共掺杂的增强作用

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摘要

We have recently reported erbium (Er)-related visible and near-infrared (~1540nm) electroluminescence (EL) from the light-emitting device (LED) with a structure of ITO/TiO_2 Er/SiO_2/Si in which TiO_2 :Er refers to the Er-doped TiO_2 film [Zhu et al., Appl. Phys. Lett. 107, 131103 (2015)]. In this work, we codope yttrium (Y) into the TiO_2 :Er film in the aforementioned LED to achieve the significantly enhanced Er-related visible and ~1540nm EL. It is suggested that the Y-codoping leads to a less symmetric and distorted crystal field around the Er~(3+) ions incorporated into the TiO_2 host, thus increasing the probabilities of intra-4/ transitions of Er~(3+) ions. Moreover, the Y-codoping facilitates the dispersion of Er~(3+) ions into the TiO_2 host, which is favorable for reducing the concentration quenching effect on the Er-related EL. For the aforementioned two reasons, the EL from the LED based on the TiO_2 :Er film can be enhanced by means of codoping Y into the TiO_2 host.
机译:最近,我们报道了具有ITO / TiO_2 Er / SiO_2 / Si结构的发光器件(LED)中与((Er)相关的可见光和近红外(〜1540nm)电致发光(EL),其中TiO_2:Er是指掺the的TiO_2薄膜[Zhu et al。,Appl。物理来吧107,131103(2015)]。在这项工作中,我们将钇(Y)共掺杂到上述LED的TiO_2:Er膜中,以实现显着增强的Er相关可见光和〜1540nm EL。提示Y掺杂导致掺入TiO_2主体的Er〜(3+)离子周围的晶体场对称性和畸变较小,从而增加了Er〜(3+)离子的Intra-4 /跃迁几率。 。而且,Y共掺杂促进了Er〜(3+)离子向TiO_2主体的分散,有利于降低对Er相关EL的浓度猝灭作用。由于上述两个原因,可以通过将Y共掺杂到TiO_2基质中来增强基于TiO_2:Er膜的LED的EL。

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  • 来源
    《Journal of Applied Physics》 |2016年第16期|163104.1-163104.5|共5页
  • 作者单位

    State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

    State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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