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机译:InAs / GaAs(211)B量子点超晶格的结构,应变和组成分析
Physics Department, Aristotle University of Thessaloniki, 54624 Thessaloniki, Greece;
Physics Department, Aristotle University of Thessaloniki, 54624 Thessaloniki, Greece;
Physics Department, Aristotle University of Thessaloniki, 54624 Thessaloniki, Greece;
Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 70013 Heraklion, Greece,Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110 Heraklion, Greece;
Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 70013 Heraklion, Greece;
Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110 Heraklion, Greece,Department of Physics, University of Crete, P.O. Box 2208, 70013 Heraklion, Greece;
Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 70013 Heraklion, Greece,Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110 Heraklion, Greece;
Physics Department, Aristotle University of Thessaloniki, 54624 Thessaloniki, Greece;
机译:GaAsSb / InAs / GaAs量子点异质结构的I型II型能带对准受点尺寸和减应力层组成的影响
机译:通过垂直堆叠INAS / GaAs量子点异质结构的应变和电子轮廓分析光点层周期性的优化
机译:InGaAs和InAlAs结合层覆盖的InAs / GaAs量子点的结构和组成轮廓
机译:使用数字合金方法的GaAs_(1-x)N_X覆盖层对应变轮廓和释放PL波长的效应和发射PL波长
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:具有飞秒光纤激光器应用的短周期超晶格封盖结构的1550 nm InAs / GaAs量子点可饱和吸收镜的开发
机译:InGaAs / GaAsN应变补偿超晶格在InAs量子点中的应用