Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates

摘要

Ga(NAsP) quantum wells grown pseudomorphically on Si substrate are promising candidates for optically active light sources in future optoelectronically integrated circuits on Si substrates. As the material is typically grown at low temperatures, it has to be thermally annealed after growth to remove defects and optimize optoelectronic properties. Here we show by quantitative transmission electron microscopy that two different kinds of structural development are associated with the annealing. First of all, the quantum well homogeneity improves with increasing annealing temperature. For annealing temperatures above 925 ℃ the composition becomes less homogeneous again. Second, voids form in the quantum well for annealing temperatures above 850 ℃. Their density and size increase continuously with increasing annealing temperature. These results are correlated to the optical properties of the samples, where we find from temperature-dependent photoluminescence measurements two scales of disorder, which show the same temperature dependence as the structural properties.