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首页> 外文期刊>Journal of Applied Physics >Evaluation of the acoustoelectric effect in the thickness direction of c-plane ZnO single crystals by Brillouin scattering
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Evaluation of the acoustoelectric effect in the thickness direction of c-plane ZnO single crystals by Brillouin scattering

机译:布里渊散射法评估c面ZnO单晶厚度方向的声电效应

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摘要

Longitudinal wave velocity dispersion in ZnO single crystals, owing to the acoustoelectric effect, has been investigated by Brillouin scattering. The resistivity dependence of the longitudinal wave velocity in a c-plane ZnO single crystal was theoretically estimated and experimentally investigated. Velocity dispersion owing to the acoustoelectric effect was observed in the range 0.007-10 Ωm. The observed velocity dispersion shows a similar tendency to the theoretical estimation and gives the piezoelectric stiffened and unstiffened wave velocities. However, the measured dispersion curve shows a characteristic shift from the theoretical curve. One possible reason is the carrier mobility in the sample, which could be lower than the reported value. The measurement data gave the piezoelectric stiffened and unstiffened longitudinal wave velocities, from which the electromechanical coupling coefficient k_(33) was determined. The value of k_(33) is in good agreement with reported values. This method is promising for noncontact evaluation of electromechanical coupling. In particular, it could be for evaluation of the unknown piezoelectricity in the thickness direction of semiconductive materials and film resonators.
机译:通过布里渊散射研究了由于声电效应引起的ZnO单晶中的纵向波速色散。理论上估计和实验研究了c平面ZnO单晶中纵波速度的电阻率依赖性。观察到由于声电效应引起的速度分散在0.007-10微米范围内。观测到的速度色散显示出与理论估计相似的趋势,并给出了压电加劲和非加劲的波速。但是,测得的色散曲线显示出与理论曲线的特征偏移。一个可能的原因是样品中的载流子迁移率可能低于报告值。测量数据给出了压电加劲和非加劲的纵向波速,由此确定了机电耦合系数k_(33)。 k_(33)的值与报告的值非常一致。该方法有望用于机电耦合的非接触评估。特别地,它可以用于评估半导体材料和薄膜谐振器在厚度方向上的未知压电性。

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  • 来源
    《Journal of Applied Physics 》 |2017年第23期| 235102.1-235102.5| 共5页
  • 作者单位

    Laboratory of Ultrasonic Electronics, Doshisha University, 1-3 Tatara-Miyakodani, Kyotanabe, Kyoto 610-0321, Japan;

    School of Advanced Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan;

    Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi 466-8555, Japan;

    Laboratory of Ultrasonic Electronics, Doshisha University, 1-3 Tatara-Miyakodani, Kyotanabe, Kyoto 610-0321, Japan;

    Laboratory of Ultrasonic Electronics, Doshisha University, 1-3 Tatara-Miyakodani, Kyotanabe, Kyoto 610-0321, Japan;

    Laboratory of Ultrasonic Electronics, Doshisha University, 1-3 Tatara-Miyakodani, Kyotanabe, Kyoto 610-0321, Japan;

    Laboratory of Ultrasonic Electronics, Doshisha University, 1-3 Tatara-Miyakodani, Kyotanabe, Kyoto 610-0321, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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