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机译:双阱双势垒GaN / AlGaN / GaN / AlGaN共振隧穿二极管的建模和优化
Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064, China;
Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064, China;
Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064, China;
Key Laboratory for Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064, China;
机译:低铝含量AlGaN / GaN双势垒共振隧穿二极管的室温负差电阻特性的可靠性
机译:基于AlGaN / GaN异质结构的三势垒隧穿二极管的理论建模
机译:在块状GaN上生长的无位错GaN / AlGaN双势垒二极管中的负差分电阻
机译:在散装GaN上种植的不脱位GaN / AlGaN双屏障二极管隧道
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:诱捕中心对Algan / GaN共振隧道二极管的影响
机译:可调谐高效谐振隧穿GaN / alGaN mQW紫外探测器