机译:温度对InGaN / GaN多量子阱发光二极管光学性能的影响
School of Electronics and Information, Nantong University, Nantong 226019, China;
School of Electronics and Information, Nantong University, Nantong 226019, China;
School of Electronics and Information, Nantong University, Nantong 226019, China;
School of Electronics and Information, Nantong University, Nantong 226019, China;
School of Electronics and Information, Nantong University, Nantong 226019, China;
School of Electronics and Information, Nantong University, Nantong 226019, China;
机译:利用量子点模型模拟InGaN / GaN多量子阱发光二极管的电和光效应
机译:InGaN阱的生长温度和三甲基铟流量对InGaN多量子阱紫光发光二极管光学性能的影响
机译:InGaN阱的生长温度和三甲基铟流量对InGaN多量子阱紫光发光二极管光学性能的影响
机译:用量子点电和光学效应模拟IngaN / GaN多量子阱发光二极管
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:等温GaN覆盖层对硅衬底上绿色发光二极管的InGaN / GaN多量子阱的影响
机译:光电性能变化InGaN / GaN多量子孔发光二极管:潜在波动的影响