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首页> 外文期刊>Journal of Applied Physics >Thermal conductivity reduction in highly doped mesoporous silicon: The effect of nano-crystal formation
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Thermal conductivity reduction in highly doped mesoporous silicon: The effect of nano-crystal formation

机译:高掺杂介孔硅的导热系数降低:纳米晶体形成的影响

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摘要

The study of heat transfer properties in mesoporous silicon, fabricated from highly doped p-type and n-type silicon wafers, is presented. Measurements were performed by a laser induced transient thermal grating technique, which allowed us to determine the effective (in-plane) thermal conductivity. It is shown that the thermal conductivity undergoes a significant decrease with respect to bulk values mainly due to a reduction of the phonon mean free path of the solid matrix. This reduction can be ascribed to the formation of nano-crystalline domains, which are a consequence of the wet etching fabrication method. Additionally, the in-plane thermal conductivity was analyzed by employing a modified effective medium approach, which includes the phonon mean free path reduction due to the presence of both the nanometric pores and the nano-crystalline domains. The theoretical analysis shows good agreement with our measurements, indicating that the inclusion of phonon mean free path reduction to an effective medium approach is a well-suited method for studying the thermal conductivity of porous silicon. Published by AIP Publishing.
机译:提出了对由高掺杂p型和n型硅晶片制成的介孔硅中传热性能的研究。通过激光感应瞬态热光栅技术进行测量,这使我们能够确定有效的(面内)导热率。结果表明,相对于体积值,热导率显着下降,这主要是由于固体基质的声子平均自由程的减小。这种减少可以归因于纳米晶畴的形成,这是湿法刻蚀制造方法的结果。另外,通过采用改进的有效介质方法来分析面内热导率,该方法包括由于存在纳米孔和纳米晶域而导致声子平均自由程降低。理论分析表明与我们的测量结果吻合良好,表明将声子平均自由程降低纳入有效介质方法是研究多孔硅导热性的理想方法。由AIP Publishing发布。

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  • 来源
    《Journal of Applied Physics 》 |2018年第8期| 085101.1-085101.9| 共9页
  • 作者单位

    CINVESTAV, Unidad Merida, Appl Phys Dept, Carretera Antigua Progreso Km 6, Merida 97310, Yucatan, Venezuela;

    CINVESTAV, Unidad Merida, Appl Phys Dept, Carretera Antigua Progreso Km 6, Merida 97310, Yucatan, Venezuela;

    CINVESTAV, Unidad Merida, Appl Phys Dept, Carretera Antigua Progreso Km 6, Merida 97310, Yucatan, Venezuela;

    Univ Nacl Autonoma Mexico, Inst Phys, Circuito Invest Cient Ciudad Univ, Mexico City 04510, DF, Mexico;

    CINVESTAV, Unidad Merida, Appl Phys Dept, Carretera Antigua Progreso Km 6, Merida 97310, Yucatan, Venezuela;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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