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Edge states in gated bilayer-monolayer graphene ribbons and bilayer domain walls

机译:门控双层-单层石墨烯带和双层畴壁中的边缘态

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摘要

Using the effective continuum model, the electron energy spectrum of gated bilayer graphene with a step-like region of decoupled graphene layers at the edge of the sample is studied. Different types of coupled-decoupled interfaces are considered, i.e., zigzag (ZZ) and armchair junctions, which result in significant different propagating states. Two non-valley-polarized conducting edge states are observed for ZZ type, which are mainly located around the ZZ-ended graphene layers. Additionally, we investigated both BA-BA and BA-AB domain walls in the gated bilayer graphene within the continuum approximation. Unlike the BA-BA domain wall, which exhibits gapped insulating behaviour, the domain walls surrounded by different stackings of bilayer regions feature valley-polarized edge states. Our findings are consistent with other theoretical calculations, such as from the tight-binding model and first-principles calculations, and agree with experimental observations. Published by AIP Publishing.
机译:使用有效的连续模型,研究了在样品边缘具有去耦石墨烯层的阶梯状区域的门控双层石墨烯的电子能谱。考虑了不同类型的耦合-解耦接口,即之字形(ZZ)和扶手椅结,其导致显着不同的传播状态。对于ZZ型,观察到两个非谷极化的导电边缘态,它们主要位于ZZ端石墨烯层周围。此外,我们在连续近似中研究了门控双层石墨烯中的BA-BA和BA-AB畴壁。与具有间隙绝缘行为的BA-BA畴壁不同,被双层区域的不同堆叠包围的畴壁具有谷极化边缘状态。我们的发现与其他理论计算是一致的,例如从严格约束模型和第一性原理计算得出的结果,并且与实验观察结果一致。由AIP Publishing发布。

著录项

  • 来源
    《Journal of Applied Physics 》 |2018年第20期| 204301.1-204301.10| 共10页
  • 作者单位

    Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

    Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

    Univ Antwerp, Dept Phys, Groenenborgerlaan 171, B-2020 Antwerp, Belgium;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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