首页> 外国专利> Graphene nano-ribbon, method of fabricating the graphene nano-ribbon, and electronic device using the graphene nano-ribbon

Graphene nano-ribbon, method of fabricating the graphene nano-ribbon, and electronic device using the graphene nano-ribbon

机译:石墨烯纳米带,石墨烯纳米带的制造方法以及使用该石墨烯纳米带的电子设备

摘要

It discloses an electronic device using a ribbon-method for preparing a ribbon manufactured by the above method graphene nano-gradient using a plasma etching technique, a large-area graphene nano-ribbons, and the graphene nano. Disclosed graphene nano-method for preparing a ribbon, by mesa etching the substrate to form a plurality of grooves and protrusions, forming an oxidized graphene thin layer on a substrate, the oxidation by means of reactive ion etching (RIE) method tilt the substrate So by reducing the graphene oxide thin pin in etching the thin film layer, and the remaining one side of the projection graphene nano-may comprise the steps of forming a ribbon. At this point, graphene nano-ribbons, depending on the width of the graphene nano-ribbons can have the energy band gap. ;
机译:本发明公开了一种电子设备,该电子设备使用带方法来制备通过上述方法通过使用等离子体蚀刻技术的石墨烯纳米梯度,大面积石墨烯纳米带和石墨烯纳米制造的带。公开了一种用于制备碳带的石墨烯纳米方法,通过台面蚀刻基板以形成多个凹槽和突起,在基板上形成氧化石墨烯薄层,通过反应离子蚀刻(RIE)法氧化使基板倾斜通过在蚀刻薄膜层时减少氧化石墨烯细销,并且投影石墨烯纳米的剩余一侧可以包括形成带的步骤。此时,取决于石墨烯纳米带的宽度,石墨烯纳米带可具有能带隙。 ;

著录项

  • 公开/公告号KR101339426B1

    专利类型

  • 公开/公告日2013-12-10

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20110115379

  • 发明设计人 고건우;황성원;손철수;심성현;

    申请日2011-11-07

  • 分类号C01B31/02;H01L23/29;H01L21/027;H01L21/329;

  • 国家 KR

  • 入库时间 2022-08-21 15:44:04

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