Effective g factor of 2D holes in strained Ge quantum wells

摘要

The effective g-factor of 2D holes in modulation doped p-SiGe/Ge/SiGe structures was studied. The AC conductivity of samples with hole densities from 3.9 x 10(11) to 6.2 x 10(11) cm(-2) was measured in perpendicular magnetic fields up to 8 T using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the g(perpendicular to)-factor of each sample was determined. The g(perpendicular to)-factor was found to be decreasing approximately linearly with hole density. This effect is attributed to the non-parabolicity of the valence band. Published by AIP Publishing.