Deterministic Particle Simulation of Multiheterojunction Bipolar Semiconductor Devices: The Semiclassical Case

摘要

The progress of semiconductor fabrication technology, particularly heteroepitaxial technology, has permitted the ob-tention of devices whose behaviour is dominated by ballistic effects through heterojunctions. In order to describe the ballistic effects we present the description and application of a deterministic particle method (The Weighted Particle Method) for the numerical resolution of the non-homogeneous Boltzmann bipolar system (kinetic model) self-consistently with the Poisson equation. This method differs from the Monte-Carlo method by the definition of an extra degree of freedom, called weight, associated with each particle. The numerical particles move in phase space according to the convective field and the time variation of the weights accounts for the collision operators, which are evaluated by means of a quadrature formula. This method is used for the simulation of high-speed InP/InGaAs heterojunction bipolar transistor (HBT's) and other optoelectronic semiconductor devices.