机译:嵌入电极高价雷控氧化还原的设计规则
Department of Materials Science and Engineering Stanford University;
Department of Materials Science and Engineering Stanford University|Stanford Institute for Materials & Energy Sciences SLAC National Accelerator Laboratory;
Advanced Light Source Lawrence Berkeley National Laboratory;
Deparment of Chemistry Waterloo Institute for Nanotechnology University of Waterloo;
Department of Materials Science and Engineering Stanford University|Stanford Institute for Materials & Energy Sciences SLAC National Accelerator Laboratory|Applied Energy Division SLAC National Accelerator Laboratory;
batteries; high-valent redox; oxygen redox; solid state chemistry; electrochemistry; RIXS;
机译:1.4 V范围内Co 4 sub> O 4 sub>古巴氧的氧化还原电位的合成控制和经验预测:对水氧化中催化剂的设计和高价中间体的评价
机译:伪电极电极模型中离子插层和表面氧化还原机制的热特征
机译:无钴3d过渡金属氧化物插层电极Li [Li_(0.2)Ni_(0.2)Mn_(0.6)] O_2中的阴离子氧化还原化学
机译:阐明可再充电多价离子电池的插层电极中的可逆电化学阴离子氧化还原
机译:钌(II)聚吡啶基配合物与氧化还原活性的嵌入配体的结构活性关系:氧化还原活性,DNA裂解能力和细胞毒性之间的相关性。
机译:1.4 V范围内Co4O4古巴人氧化还原电位的合成控制和经验预测:对水氧化中催化剂设计和高价中间体评估的意义
机译:电化学氧嵌入期间探索(ND / PR)2NIO4 +Δ电极的相图和氧化还原行为