Overcoming the excessive compressive strain in AIGaN epitaxy by introducing high Si-doping in AIN templates

摘要

The influence of compressive strain in high-quality AlN templates on the subsequent growth of AlGaN-based device layers was investigated. The AlN templates showed compressive strain of similar to-0.29% and threading dislocation densities (TDDs) below 6.5 x 10(8) cm(-2). By introducing high Si-doping in MOVPE-grown AlN, the compressive strain was relaxed while preserving the low TDD. By this method, the low TDD was transferred from the AlN template to the micron-thick n-Al0.63Ga0.37N. A 275 nm LED was demonstrated with a similar to 2.5 times power enhancement than the same LED on conventional MOVPE-grown AlN template under low current injection. The maximum external quantum efficiency (EQE) was enhanced from 1.6% to 2.2% with an improved n-AlGaN.