Implementation of Coulomb blockade transport on a semiconductor device simulator and its application to tunnel-FET-based quantum dot devices

摘要

The quantum transport model describing the Coulomb blockade observed in semiconductor quantum dot devices is implemented on a semiconductor device simulator. The model considers tunnel path change with varying applied voltage, due to carrier redistribution with changing the voltage, in semiconductor quantum dot devices. We applied the model to simulate characteristics of tunnel-FET-based quantum dot devices. We observed two Coulomb oscillation peaks in OFF-state voltage region in gate-voltage-drain-current curves. Also, a so-called Coulomb diamond, which is shown in a mapping of current-voltage characteristics of quantum dot devices, is successfully observed. Finally, we discuss the tunnel path depending on applied voltages, which implies that the simulation with the model successfully considers carrier redistribution in semiconductor quantum dot devices. (c) 2020 The Japan Society of Applied Physics