Small-signal design consideration for two-dimensional change-over switch GaN MMICs

摘要

This paper presents small-signal design consideration for two-dimensional change-over switch GaN monolithic microwave integrated circuits (MMICs). For the design of two-dimensional change-over single pole single throw (SPST) switch circuit which electrically changes between low pass filter and high pass filter, the demands for design conditions are as follows: 1. two-dimensional switch with time/frequency domain, 2. The sufficient isolation in off-state at the signal frequencies for both low band and high band. Two-dimensional change-over single pole double throw (SPDT) switch provides a duplexer for frequency division duplex operation and an SPDT switch for time division duplex operation for low-cost the fifth generation (5G) front-ends (FEs), GaN two-dimensional change-over SPST and SPDT MIMIC switches are successfully demonstrated by using 0.25 mu m GaN foundry process for high power handling capability in 5G FEs. The demonstrated GaN MMIC switches shows almost the same two-dimensional switching characteristics as the designed ones. (C) 2020 The Japan Society of Applied Physics