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Millimeter-Wave GaN MMIC Integration with Additive Manufacturing

机译:毫米波GaN MMIC与增材制造的集成

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摘要

This thesis addresses the analysis, design, integration and test of microwave and millimeter-wave monolithic microwave integrated circuits (MMIC or MMICs). Recent and ongoing progress in semiconductor device fabrication and MMIC processing technology has pushed the upper limit in MMIC frequencies from millimeter-wave (30--300 GHz) to terahertz (300--3000 GHz). MMIC components operating at these frequencies will be used to improve the sensitivity and performance of radiometers, receivers for communication systems, passive remote sensing systems, transceivers for radar instruments and radio astronomy systems. However, a serious hurdle in the utilization of these MMIC components, and a main topic presented in this thesis, is the development and reliable fabrication of practical packaging techniques.;The focus of this thesis is the investigation of first, the design and analysis of microwave and millimeter-wave GaN MMICs and second, the integration of those MMICs into usable waveguide components. The analysis, design and testing of various X-band (8--12 GHz) thru H-band (170--260 GHz) GaN MMIC power amplifier (PA or PAs), including a V-band (40--75 GHz) voltage controlled oscillator, is the majority of this work. Several PA designs utilizing high-efficiency techniques are analyzed, designed and tested. These examples include a 2nd harmonic injection amplifier, a Class-E amplifier fabricated with a GaN-on-SiC 300 GHz fT process, and an example of the applicability of supply-modulation with a Doherty power amplifier, all operating at 10 GHz. Two H-band GaN MMIC PAs are designed, one with integrated CPW-to-waveguide transitions for integration. The analysis of PA stability is especially important for wideband, high- fT devices and a new way of analyzing stability is explored and experimentally validated.;Last, the challenges of integrating MMICs operating at millimeter-wave frequencies are discussed and assemblies using additive and traditional manufacturing are demonstrated.
机译:本文致力于微波和毫米波单片微波集成电路(MMIC或MMIC)的分析,设计,集成和测试。半导体器件制造和MMIC处理技术的最新进展将MMIC频率的上限从毫米波(30--300 GHz)推至太赫兹(300--3000 GHz)。在这些频率下运行的MMIC组件将用于提高辐射计,通信系统的接收器,无源遥感系统,雷达仪器的收发器和射电天文学系统的灵敏度和性能。然而,利用这些MMIC组件的一个严重障碍是实用包装技术的发展和可靠制造,这是本论文提出的一个主要课题。本文的重点是对第一,第二部分的设计和分析进行研究。微波和毫米波GaN MMIC,其次,将这些MMIC集成到可用的波导组件中。通过X波段(8--12 GHz)到H波段(170--260 GHz)GaN MMIC功率放大器(PA或PA)的分析,设计和测试,包括V波段(40--75 GHz) )压控振荡器,是这项工作的绝大部分。分析,设计和测试了几种利用高效技术的功率放大器设计。这些示例包括二次谐波注入放大器,采用SiC衬底上的GaN 300 GHz fT工艺制造的E类放大器,以及采用Doherty功率放大器进行电源调制的适用性示例,它们均工作于10 GHz。设计了两个H波段GaN MMIC PA,其中一个集成了CPW到波导的集成过渡。 PA稳定性分析对于宽带,高fT设备尤其重要,并且探索了一种新的稳定性分析方法并进行了实验验证。最后,讨论了集成以毫米波频率运行的MMIC的挑战,以及使用加法和传统方法进行组装演示制造。

著录项

  • 作者

    Coffey, Michael.;

  • 作者单位

    University of Colorado at Boulder.;

  • 授予单位 University of Colorado at Boulder.;
  • 学科 Electromagnetics.;Electrical engineering.
  • 学位 Ph.D.
  • 年度 2017
  • 页码 180 p.
  • 总页数 180
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:36:47

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