Fabrication of V_(1-x)Ti_xO_2 thin films by metal-organic decomposition using carbon thermal reduction

摘要

V1-xTixO2 thin films were fabricated on Si3N4/SiO2/Si substrates by metal-organic decomposition. The VO2 phase in the range of x= 0-0.25 was obtained by preparing the precursor film calcined at 300 degrees C for 15 min in a N-2 atmosphere and firing these films at 580 degrees C-600 degrees C for 15 min in a N-2 atmosphere. V1-xTixO2 thin films were successfully obtained by carbon thermal reduction. In the resistance-temperature characteristics, the reduction of hysteresis and the broadening of metal-insulator transition (MIT) occurred with increasing x, and hysteresis and a significant resistance change due to the MIT disappeared at x = 0.25. The temperature coefficients of resistance (TCRs) at x= 0-0.25 were as high as -4.1 similar to -5.5%/K at 27 degrees C. At x= 0.25, TCRs were -4.3 similar to - 7.0%/K from 45 degrees C to 65 degrees C and a flat temperature dependence of TCR were realized at the temperature range from 10 degrees C to 80 degrees C. (C) 2019 The Japan Society of Applied Physics