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机译:MOCVD法反转InGaP / GaAs双结太阳能电池中Zn-Si供体-受体对陷阱的影响
Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China;
Uniwatt Technol CO Ltd, Zhongshan 528437, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China|Sun Yat Sen Univ, Foshan Inst, Foshan 528225, Peoples R China;
机译:Zn-Si供体对陷阱在逆变Ingap / GaAs双结太阳能电池中的影响Mocvd
机译:带有AlGaAs / GaAs隧道二极管的InGaP / GaAs双结太阳能电池生长在偏离取向的GaAs衬底10°处
机译:使用氢化物气相外延制造的InGaP / GaAs双结太阳能电池的子单元开路电压分析
机译:1.62 eV / 1.1 eV InGaP / InGaAs双结太阳能电池开发晶格不匹配的砷化镓
机译:可溶液加工的基于InGaP的量子点和钙钛矿太阳能电池的研究
机译:电子束法表征MOCVD InGaP / GaAs结中界面处多余层的化学性质
机译:使用Silvaco TCAD的InGaP / GaAs双结太阳能电池的性能优化
机译:mOCVD生长的Gaas异质结太阳能电池中alGaas / Gaas界面的正电子湮没光谱