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Dependence of substrate work function on the energy-level alignment at organic-organic heterojunction interface

机译:衬底功函数对有机-有机异质结界面能级排列的依赖性

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The dependence of substrate work function (WF) on organic-organic heterojunction (OOH) interface was investigated using ultraviolet and X-ray photoelectron spectroscopy. We studied the interface of boron subphthalocyanine chloride (SubPc)/alpha-sexithiophene (6T) deposited on MoO3,SiO2, Cs2CO3. We observed that MoO3 and Cs-2 CO3 induce a p-doping and n-doping, respectively, due to the WF position, that can generate charge transfer at the OOH interface. However, the same effect was not observed after annealing the organic layers. Using scanning transmission X-ray microscope combining with near-edge X-ray absorption fine structure, we could observe that SubPc film became well-ordered after annealing the thin film. Thus, we suggested that the control of charge transfer arises from the reduction of the molecules misorientation on the film that induces a reduction in the density of gap states. (C) 2019 The Japan Society of Applied Physics
机译:使用紫外和X射线光电子能谱研究了基体功函数(WF)对有机-有机异质结(OOH)界面的依赖性。我们研究了沉积在MoO3,SiO2,Cs2CO3上的硼亚酞菁氯化硼(SubPc)/α-亚锡噻吩(6T)的界面。我们观察到,由于WF位置,MoO3和Cs-2 CO3分别引起p掺杂和n掺杂,这可以在OOH界面上产生电荷转移。然而,在对有机层进行退火之后未观察到相同的效果。使用扫描透射X射线显微镜结合近缘X射线吸收精细结构,我们可以观察到SubPc薄膜在薄膜退火后变得有序。因此,我们认为电荷转移的控制源于减少膜上分子取向错误的现象,这导致间隙态密度的降低。 (C)2019日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sb期|SBBG06.1-SBBG06.8|共8页
  • 作者单位

    Univ Tsukuba, Fac Pure & Appl Sci, Dept Appl Phys, Tsukuba, Ibaraki 3058573, Japan;

    Hiroshima Univ, Grad Sch Sci, Dept Earth & Planetary Syst Sci, Higashihiroshima, Hiroshima 7398526, Japan;

    High Energy Accelerator Res Org, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan;

    High Energy Accelerator Res Org, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan;

    Univ Tokyo, Grad Sch Sci, Dept Earth & Planetary Sci, Bunkyo Ku, Tokyo 1130033, Japan;

    Nagoya Univ, Inst Innovat Future Soc, Nagoya, Aichi 4648601, Japan;

    Inst Mol Sci, Dept Photomol Sci, Okazaki, Aichi 4448585, Japan;

    Inst Mol Sci, Dept Photomol Sci, Okazaki, Aichi 4448585, Japan;

    Univ Tsukuba, Fac Pure & Appl Sci, Dept Appl Phys, Tsukuba, Ibaraki 3058573, Japan;

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