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Performance enhancement of a hydrothermally grown ZnO-based ultraviolet photodetector using substrate transfer and pyramid-like surface texture

机译:利用衬底转移和金字塔状表面纹理增强水热生长的ZnO基紫外光电探测器的性能

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摘要

A comparative study of the performance of lateral- and vertical-structured UV photodetectors (PDs) based on a hydrothermally grown (HTG) n-ZnOtsputtered p-CuO heterojunction (HJ) is presented. After substrate transfer (ST) conducted using a sonicating bath process, the vertical-structured UV PD showed a fast response and a 310-fold improvement in light responsivity compared with that of the lateral-structured UV PD under UV illumination (365 nm at 3 mW cm(-2)) at a reverse bias of -1 V. This improvement is attributed to the much shorter conduction path and lake of a seed layer for the vertical structure. With further surface chemical etching of the HTG n-ZnO layer after ST, a pyramid-like surface texture formed and a significantly enhanced UV light response (as high as 943-fold higher) was obtained. The increase in photo-responsivity is due to the removal of the high defect density initial ZnO growth layer and reduced light reflection. (C) 2019 The Japan Society of Applied Physics
机译:提出了基于水热生长(HTG)n-ZnO溅射p-CuO异质结(HJ)的横向和垂直结构UV光电探测器(PDs)性能的比较研究。在超声浴下进行基板转移(ST)后,垂直结构的UV PD与横向结构的UV PD在紫外线照射下(3 nm下为365 nm)相比显示出快速响应,并且光响应率提高了310倍mW cm(-2))在-1 V的反向偏置下。这种改进归因于垂直结构的种子层的传导路径和色淀短得多。在ST之后,通过对HTG n-ZnO层进行进一步的表面化学蚀刻,可以形成金字塔形的表面纹理,并显着增强UV光响应(高达943倍)。光响应性的提高是由于去除了高缺陷密度的初始ZnO生长层并减少了光反射。 (C)2019日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sb期|SBBG19.1-SBBG19.7|共7页
  • 作者单位

    Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;

    Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan|Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan;

    Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan;

    Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;

    Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;

    Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;

    Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;

    Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan;

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