机译:铁电Pb(Zr,Ti)O_3薄膜电容器用PtNb合金电极的研究
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan;
PZT; FeRAM; PtNb; alloy; electrode; fatigue;
机译:多层PbZr_(0.52)Ti_(0.48)O_3 / Pb(Mg_(1/3)Ta_(2/3))_(0.7)Ti_(0.3)O_3 / PbZr_(0.52)Ti_(0.48)O_3的铁电和导电行为电影
机译:带有IrO_2顶部电极的铁电Pb(Zr,Ti)O_3薄膜电容器的还原环境退火性能的改进电阻
机译:Pb(Zr_(0.6)Ti_(0.4))O_3薄膜电容器铁电性能的厚度依赖性研究
机译:应变增强的PB(Zr_(0.8)Ti_(0.2))O_3 / PB(Zr_(0.2)Ti_(0.8))O_3多层薄膜而无缓冲层的介电和铁电性能
机译:压电瘤应用Pb(Zr0.3Ti0.7)O3薄膜对缩放效应对缩放效应的影响
机译:Pb(Zr0.53Ti0.47)O3薄膜中铁电和光学性质的厚度依赖性
机译:带有Pt Ox电极的Pb(Zr0.4 Ti 0.6)O3薄膜电容器的铁电性能增强
机译:a-sITE-aND /或B-sITE-mODIFIED pBZRTIO3材料和(pB,sR,Ca,Ba,mG)(ZR,TI,NB,Ta)O3薄膜,具有铁电随机存取存储器和高性能薄膜微处理器的实用性